首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   4459篇
  免费   134篇
  国内免费   6篇
化学   3217篇
晶体学   49篇
力学   49篇
综合类   2篇
数学   164篇
物理学   1118篇
  2023年   27篇
  2021年   37篇
  2020年   63篇
  2019年   68篇
  2018年   51篇
  2017年   22篇
  2016年   79篇
  2015年   100篇
  2014年   81篇
  2013年   218篇
  2012年   218篇
  2011年   230篇
  2010年   140篇
  2009年   151篇
  2008年   208篇
  2007年   252篇
  2006年   226篇
  2005年   239篇
  2004年   195篇
  2003年   173篇
  2002年   174篇
  2001年   113篇
  2000年   109篇
  1999年   72篇
  1998年   50篇
  1997年   36篇
  1996年   69篇
  1995年   51篇
  1994年   43篇
  1993年   63篇
  1992年   63篇
  1991年   61篇
  1990年   50篇
  1989年   51篇
  1988年   49篇
  1987年   53篇
  1986年   46篇
  1985年   83篇
  1984年   66篇
  1983年   36篇
  1982年   46篇
  1981年   42篇
  1980年   52篇
  1979年   53篇
  1978年   45篇
  1977年   32篇
  1976年   37篇
  1975年   23篇
  1974年   27篇
  1973年   25篇
排序方式: 共有4599条查询结果,搜索用时 234 毫秒
41.
Mössbauer spectra of ferrocene adsorbed on silica gel were measured in order to study the state of adsorption. Ferrocene adsorbed on silica gel tended to oxidize in air and form ferricenium ion. It is assumed that the oxidation of adsorbed ferrocene was caused by surface hydroxyls on the silica gel and O2 in air. It was observed that ferrocene adsorbed weakly at 293 K, although the ferricenium ion adsorbed strongly at 293 K. Thus the adsorption states of ferrocene depend on the experimental condition.  相似文献   
42.
43.
44.
45.
46.
47.
Diamond-like carbon films prepared by pulsed-laser evaporation   总被引:1,自引:0,他引:1  
Diamond-like carbon thin films were prepared by pulsed-laser evaporation. In this method a carbon target was irradiated by a XeCl laser with a power density of 3×108 W/cm2 and carbon atoms, together with a small number of ions, were produced. Deposition rates and film properties changed sensitively with substrate temperature. The films deposited at 50°C were diamond-like, having reasonable hardness, high refractive index (2.1–2.2 at 633 nm), optical transparency in the infrared, electrical resistivity of 108 cm and chemical inertness (no dissolution in a HFHNO3 solution). The band gap measured from optical absorption was 1.4 eV. Raman spectrum and infrared absorption, whose features varied with the substrate temperature, were also measured. The films were amorphous and no crystallinity was observed, as confirmed by x-ray diffraction, transmission electron diffraction and Raman spectroscopy. Hydrogen atoms were incorporated in the films with a typical H/C ratio of 0.3. The application of a negative bias to the substrate modified the deposition due to the presence of ions.  相似文献   
48.
49.
50.
Hyaluronate-hydroxyethyl acrylate blend gel (HA-PHEA) were prepared to modify the brittleness of hyaluronate gel (HA) and the characteristics of HA-PHEA gel were compared with those of HA and polyhydroxyethyl acrylate (PHEA) gels. These gels were high in water content and transparent. HA-PHEA gel was improved in viscoelastic properties due to the elasticity and the high affinity with water of PHEA, and the drying-swelling cycles became reversible. The effective charge densities theta of the gels estimated from membrane potentials were -0.002, -0.008 and 0 mol dm(-3) for HA-PHEA, HA and PHEA gels. Effects of electro- static and nonelectrostatic interactions on absorptions and releases were studied using sodium benzoate (NaBA) as an anionic solute, and methylene blue (MB), chlorpromazine (CPHCl) and benzethonium chloride (BZTCl) as cationic solutes, in which CPHCl and BZTCl are cationic amphiphilic solutes. The releases of MB, CPHCl and BZTCl from HA-PHEA and HA gels were suppressed comparing with those of NaBA. By adding salts, the releases of MB and CPHCl were enhanced but those of BZTCl were suppressed due to enhancement of the intra- and intermicelle formation. In the releases of the cationic solutes from HA-PHEA gel, electrostatic and nonelectrostatic interactions with HA were found to play important roles. Behaviors of the releases from HA-PHEA gel were found to possess the features of HA gel.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号